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| PD - 91452E IRG4BC30U INSULATED GATE BIPOLAR TRANSISTOR Features * UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * Industry standard TO-220AB package C UltraFast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-channel Benefits * Generation 4 IGBTs offer highest efficiency available * IGBTs optimized for specified application conditions * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 600 23 12 92 92 20 10 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.50 --- 2 (0.07) Max. 1.2 --- 80 --- Units C/W g (oz) www.irf.com 1 4/17/2000 IRG4BC30U Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage T 18 -- -- V VGE = 0V, IC = 1.0A V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.63 -- V/C VGE = 0V, IC = 1.0mA -- 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage -- 2.52 -- IC = 23A See Fig.2, 5 V -- 2.09 -- IC = 12A , TJ = 150C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -13 -- mV/C VCE = VGE, IC = 250A gfe Forward Transconductance U 3.1 8.6 -- S VCE = 100V, IC = 12A -- -- 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C IGES Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 7.5 1100 73 14 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig.8 27 VGE = 15V -- -- TJ = 25C ns 120 IC = 12A, VCC = 480V 150 VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 10, 11, 13, 14 0.50 -- TJ = 150C, -- IC = 12A, VCC = 480V ns -- VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig.7 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30U 35 F o r b o th : 30 T ria n g u la r w a ve : I Load Current ( A ) D uty cy cle: 50% T J = 125C T s ink = 90C Gate drive as s pecified P o w e r D is s ip a tio n = 2 1 W 25 C la m p vo l ta g e : 8 0 % o f ra te d 20 S q u a re wave : 6 0 % o f ra te d v o lta g e 15 I 10 Id e al d io de s 5 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 100 I C , C olle cto r-to -E m itte r C u rre n t (A ) TJ = 2 5 C T J = 1 5 0 C 10 I C , C o lle cto r-to -E m itte r C u rre n t (A ) T J = 1 5 0 C 10 T J = 2 5 C 1 1 0.1 0.1 1 VG E = 1 5 V 2 0 s P U L S E W ID T H A 10 0.1 5 6 7 8 V CC = 10V 5 s P U L S E W ID T H 9 10 11 A 12 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30U M a xim u m D C C o lle c to r C u rre n t (A 25 3.0 V C E , C ollector-to-Em itter Volta ge (V) V GE = 15V VGE = 15V 8 0 s P U L S E W ID T H IC = 2 4 A 20 2.5 15 IC = 1 2 A 2.0 10 5 I C = 6 .0 A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1.5 TC , C a s e Te m p e ra tu re (C ) T J , Ju n c tio n T e m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 T he rm al R e sp ons e (Z thJ C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 PD M 0 .1 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) t 1 t2 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k T J = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30U 2000 C , C a pac ita n ce (pF ) 1600 V G E , G ate -to -E m itter V olta g e (V ) V GE = C ie s = C re s = C oes = 0V , f = 1MHz C g e + C g c , C ce S H O R TE D C gc C ce + C g c 20 VCE = 400V I C = 12A 16 C ie s 1200 12 800 C oes 8 400 C re s 4 0 1 10 A 100 0 0 10 20 30 40 A 50 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , To ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 T otal S witch ing Lo ss e s (m J ) 0.4 T otal S witch ing L os se s (m J ) VCC VGE TJ IC = 480V = 15V = 2 5 C = 12A 10 = 23 V GE = 15V V CC = 480V RG IC = 2 4 A 1 IC = 12A 0.3 I C = 6 .0 A 0.2 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , G a te R e s ista n ce ( ) TJ , Ju n c tio n T e m p e ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30U 1.6 T ota l S witch in g Los se s (m J) 1.2 I C , C ollector-to-E m itter C urrent (A ) RG TJ V CC V GE = 23 = 1 5 0 C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 C 100 S A FE O P E R A TIN G A R E A 10 0.8 0.4 1 0.0 0 10 20 30 A 0 .1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC30U L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V R Q * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit Q R 9 0% S 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BC30U Case Outline and Dimensions TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.160) 3.55 (.140) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com |
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